Published January 7, 2016 | Version v1
Journal article

Reaction paths of phosphine dissociation on silicon (001)

  • 1. Centre for Quantum Computation and Communication Technology, School of Physics, The University of Sydney, Sydney, NSW 2006 (Australia)
  • 2. London Centre for Nanotechnology and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London WC1H 0AH (United Kingdom)
  • 3. Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales, Sydney, NSW 2052 (Australia)
  • 4. London Centre for Nanotechnology and Department of Physics and Astronomy, University College, 17-19 Gordon Street, London WC1H 0AH (United Kingdom)
  • 5. Discipline of Physics & Astronomy, Curtin University, GPO Box U1987, Perth, WA (Australia)
  • 6. School of Applied Sciences, RMIT University, Melbourne, VIC 3000 (Australia)
  • 7. CSIRO Virtual Nanoscience Laboratory, Parkville, VIC 3052 (Australia)
  • 8. School of Mathematical and Physical Sciences, The University of Newcastle, Callaghan, NSW 2308 (Australia)

Description

Using density functional theory and guided by extensive scanning tunneling microscopy (STM) image data, we formulate a detailed mechanism for the dissociation of phosphine (PH3) molecules on the Si(001) surface at room temperature. We distinguish between a main sequence of dissociation that involves PH2+H, PH+2H, and P+3H as observable intermediates, and a secondary sequence that gives rise to PH+H, P+2H, and isolated phosphorus adatoms. The latter sequence arises because PH2 fragments are surprisingly mobile on Si(001) and can diffuse away from the third hydrogen atom that makes up the PH3 stoichiometry. Our calculated activation energies describe the competition between diffusion and dissociation pathways and hence provide a comprehensive model for the numerous adsorbate species observed in STM experiments

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Chemical Physics
Journal Volume
144
Journal Issue
1
Journal Page Range
p. 014705-014705.17
ISSN
0021-9606
CODEN
JCPSA6

Optional Information

Notes
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