Published May 2016 | Version v1
Journal article Metadata-only

Effective method of photoregistration of infrareds with using the semiconductor ionization camera

Creators

  • 1. Fergana Polytechnic Institute, Fergana (Uzbekistan)

Description

In the article, a new construction of semiconductor photographic system is suggested where Si(Pt) serves as a photoreceiver of infrared radiation up to λ=4.2 mkm. The results of numerical calculation of optimal doping Si(Pt) photoreceiver are compared with experimental data obtained by the thermodiffusion method. Photo- and thermoelectric characteristics of photographic system are given. (authors)

Additional details

Additional titles

Original title (Russian)
Эффективный метод фотографической регистрации инфракрасного излучения с помощью полупроводниковой ионизационной камеры

Publishing Information

Journal Title
Uzbekiston Fizika Zhurnali
Journal Volume
18
Journal Issue
3
Journal Page Range
p. 199-205
ISSN
1025-8817

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
49052496
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CAMERAS; COMPARATIVE EVALUATIONS; CONSTRUCTION; ELECTRIC CONDUCTIVITY; EQUIPMENT; FERMI LEVEL; INFRARED RADIATION; IONIZATION CHAMBERS; PHOTOCURRENTS; PHOTOGRAPHY; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; THERMAL DIFFUSION
Descriptors DEC
CURRENTS; DIFFUSION; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ENERGY LEVELS; EVALUATION; MATERIALS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE

Optional Information

Notes
6 refs., 5 figs.