Published October 2019 | Version v1
Journal article

Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots

  • 1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)
  • 2. Institut für Festkörperphysik, Technische Universität Berlin (Germany)

Description

The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single (111) In(Ga)As quantum dots grown on a (111) BGaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing second-order correlation functions g(2)(τ); g(2)(0) = 0.07. The fine structure of the exciton states of (111) In(Ga)As quantum dots is investigated. It is shown that, in the energy range of 1.320–1.345 eV, the splitting of exciton states is comparable to the natural width of the exciton lines, which is of interest for developing photon-pair emitters based on them.

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Publishing Information

Journal Title
Semiconductors (Woodbury, N.Y., Print)
Journal Volume
53
Journal Issue
10
Journal Page Range
p. 1304-1307
ISSN
1063-7826
CODEN
SMICES

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Copyright (c) 2019 Pleiades Publishing, Ltd.