Published April 2005 | Version v1
Journal article Metadata-only

Optical studies of defects generated in neutron-irradiated Cz-Si during HP-HT treatment

Creators

  • 1. Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)
  • 2. Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
  • 3. Department of Physics, Panepistimiopolis, GR-15784 Zografos, Athens (Greece)
  • 4. Silicon CEMAT, Wolczynska 133, 01-919 Warsaw (Poland)

Description

Neutron-irradiated Czochralski grown silicon subjected to heat treatment (HT) at 350 C and 1000 C under enhanced hydrostatic pressure (HP) was studied in this work. It has been shown that external hydrostatic pressure enhances the creation of VO2 defects in neutron irradiated silicon subjected to the HP-HT treatment at 350 C. Enhanced formation of platelet-like oxygen precipitates was found in the samples treated at 1000 C under 1.1 GPa. This effect was more pronounced in the samples with VO2 defects. Presented results seem to suggest that probably HP helps to transform VO2 to some kind of defects or change alone VO2 defects in the form that can act as an additional nucleus for an additional oxygen precipitation at 1000 C. No correlation between the plate-like oxygen precipitates related absorption at 1225 cm-1 and dislocation-related emission has been confirmed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/crat.200410369

Additional details

Identifiers

DOI
10.1002/crat.200410369;

Publishing Information

Journal Title
Crystal Research and Technology
Journal Volume
40
Journal Issue
4-5
Journal Page Range
p. 471-476
ISSN
0232-1300
CODEN
CRTEDF

Conference

Title
International conference on solid states crystals materials science and applications
Dates
16-20 May 2004
Place
Zakopane (Poland)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
36046289
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION SPECTRA; CZOCHRALSKI METHOD; DISLOCATIONS; FAST NEUTRONS; HEAT TREATMENTS; INFRARED SPECTRA; INTERSTITIALS; OPACITY; OXYGEN; PHYSICAL RADIATION EFFECTS; PRECIPITATION; PRESSURE RANGE GIGA PA; SILICON; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; VACANCIES
Descriptors DEC
BARYONS; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; LINE DEFECTS; NEUTRONS; NONMETALS; NUCLEONS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; POINT DEFECTS; PRESSURE RANGE; RADIATION EFFECTS; SEMIMETALS; SEPARATION PROCESSES; SPECTRA; TEMPERATURE RANGE

Optional Information

Notes
With 5 figs., 1 tab., 22 refs.. SICI: 0232-1300(200504)40:4/5<471::AID-CRAT200410369>3.0.TX;2-1