Surface reactivity of Ge[111] for organic functionalization by means of a radical-initiated reaction: A DFT study
Creators
- 1. Centro de Investigación Científica y de Educación Superior de Ensenada 3918, Código Postal 22860, Ensenada, Baja California (Mexico)
- 2. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Apartado Postal 14, Código Postal 22800, Ensenada, Baja California (Mexico)
Description
Highlights: • The surface reactivity of the Ge [111] surface is studied with DFT for the attachment of organic molecules by means of a radical-initiated reaction. • A hydrogen vacancy in the hydrogen terminated Ge [111] surface exhibits an accumulation of charge and electron pairing. • These characteristics make the hydrogen vacancy less reactive for the attachment of unsaturated organic molecules. • The adsorption of acetylene is probable to occur while the adsorption of ethylene and styrene is substantially less probable to occur. • The hydrogen terminated Ge [111] surface is found to be less reactive than its two-dimensional analogue, the hydrogen-terminated germanene. - Abstract: The study of interfacial chemistry at semiconductor surfaces has become an important area of research. Functionalities such as molecular recognition, biocompatibility of surfaces, and molecular computing, could be achieved by the combinations of organic chemistry with the semiconductor technology. One way to accomplish this goal is by means of organic functionalization of semiconductor surfaces such as the bulk-terminated germanium surfaces, more specifically the Ge[111]. In this work, we theoretically study, by applying density functional theory, the surface reactivity of the bulk-terminated Ge[111] surface for organic functionalization by means of a radical-initiated reaction of unsaturated molecules such as acetylene, ethylene and styrene with a hydrogen vacancy on a previously hydrogen-terminated Ge[111] surface. Results derived from this work are compared with those obtained in our previous calculations on the germanene surface, following the same chemical route. Our calculations show an accumulation of electronic charge at the H-vacancy having as a result electron pairing due to strong lattice-electron coupling and therefore a diminished surface reactivity. Calculation of the transition states for acetylene and ethylene indicates that the surface reactivity of the hydrogen-terminated Ge[111] surface is less promising than its two-dimensional analogue, the hydrogen-terminated germanene.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2016.04.040Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2016.04.040;
- PII
- S0169-4332(16)30781-4;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 379
- Journal Page Range
- p. 14-22
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48021432
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACETYLENE; COMPARATIVE EVALUATIONS; DENSITY FUNCTIONAL METHOD; ELECTRONS; ETHYLENE; GERMANENE; HYDROGEN; REACTIVITY; SEMICONDUCTOR MATERIALS; STYRENE; SURFACES; TWO-DIMENSIONAL CALCULATIONS; VACANCIES
- Descriptors DEC
- ALKENES; ALKYLATED AROMATICS; ALKYNES; AROMATICS; CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; EVALUATION; FERMIONS; GERMANIUM; HYDROCARBONS; LEPTONS; MATERIALS; METALS; NONMETALS; ORGANIC COMPOUNDS; POINT DEFECTS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.