Published January 2021 | Version v1
Journal article

A recyclable molten-salt synthesis of B and K co-doped g-C3N4 for photocatalysis of overall water vapor splitting

  • 1. College of Chemistry, Zhengzhou University, Zhengzhou 450052 (China)
  • 2. College of Chemistry and Chemical Engineering, Henan Institute of Science and Technology, Xinxiang 453000 (China)
  • 3. School of Chemistry and Materials Engineering, Xinxiang University, Xinxiang 453000 (China)
  • 4. Department of Material and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou 450052 (China)

Description

Highlights: • B and K co-doped g-C3N4 was synthesized by molten salt method. • The good photocatalytic performance for water vapor splitting was found. • Recycled molten salt was used for preparation of codoped g-C3N4. • Photocatalyst exhibited good cycling and stability. • Doped B and K accelerated the photoinduced electron-hole separation. Photocatalytic overall water splitting is one of the green and efficient energy technologies. Due to difficult release of O2 from photocatalysts, the simultaneous generation of H2 and O2 is a critical challenge for water splitting. B and K co-doped g-C3N4 (B/K-g-C3N4) catalyst was synthesized by the recyclable molten-salt method in this study. Compared with the K doped and pristine g-C3N4 samples, B/K-g-C3N4 exhibited the highest photocatalytic activity for water vapor splitting under visible light illumination. The yield ratio of H2 and O2 reached approximately 2:1, and the corresponding rates were 1.18 and 0.58 μmol/h after 24 h of illumination. The B/K-g-C3N4 sample demonstrated good photocatalytic stability after 9 cycles. Additionally, the co-doped g-C3N4 catalyst, obtained from the repeatedly recyclable salts, still exhibited equivalent photocatalytic activity. Based on the built structure model with g-C3N4, the HOMO and LUMO distributions were changed by B and K co-doping, leading to improved separation of photoinduced carriers. The photocatalytic mechanism for water splitting over g-C3N4 semiconductor was speculated.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2020.148014

Additional details

Identifiers

DOI
10.1016/j.apsusc.2020.148014;
PII
S0169433220327719;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
537
Journal Page Range
vp.
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54078284
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DOPED MATERIALS; MOLTEN SALTS; PHOTOCATALYSIS; SEMICONDUCTOR MATERIALS; SYNTHESIS; WATER VAPOR
Descriptors DEC
CATALYSIS; FLUIDS; GASES; MATERIALS; SALTS; VAPORS

Optional Information

Copyright
Copyright (c) 2020 Elsevier B.V. All rights reserved.