A recyclable molten-salt synthesis of B and K co-doped g-C3N4 for photocatalysis of overall water vapor splitting
Creators
- 1. College of Chemistry, Zhengzhou University, Zhengzhou 450052 (China)
- 2. College of Chemistry and Chemical Engineering, Henan Institute of Science and Technology, Xinxiang 453000 (China)
- 3. School of Chemistry and Materials Engineering, Xinxiang University, Xinxiang 453000 (China)
- 4. Department of Material and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou 450052 (China)
Description
Highlights: • B and K co-doped g-C3N4 was synthesized by molten salt method. • The good photocatalytic performance for water vapor splitting was found. • Recycled molten salt was used for preparation of codoped g-C3N4. • Photocatalyst exhibited good cycling and stability. • Doped B and K accelerated the photoinduced electron-hole separation. Photocatalytic overall water splitting is one of the green and efficient energy technologies. Due to difficult release of O2 from photocatalysts, the simultaneous generation of H2 and O2 is a critical challenge for water splitting. B and K co-doped g-C3N4 (B/K-g-C3N4) catalyst was synthesized by the recyclable molten-salt method in this study. Compared with the K doped and pristine g-C3N4 samples, B/K-g-C3N4 exhibited the highest photocatalytic activity for water vapor splitting under visible light illumination. The yield ratio of H2 and O2 reached approximately 2:1, and the corresponding rates were 1.18 and 0.58 μmol/h after 24 h of illumination. The B/K-g-C3N4 sample demonstrated good photocatalytic stability after 9 cycles. Additionally, the co-doped g-C3N4 catalyst, obtained from the repeatedly recyclable salts, still exhibited equivalent photocatalytic activity. Based on the built structure model with g-C3N4, the HOMO and LUMO distributions were changed by B and K co-doping, leading to improved separation of photoinduced carriers. The photocatalytic mechanism for water splitting over g-C3N4 semiconductor was speculated.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2020.148014Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2020.148014;
- PII
- S0169433220327719;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 537
- Journal Page Range
- vp.
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54078284
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DOPED MATERIALS; MOLTEN SALTS; PHOTOCATALYSIS; SEMICONDUCTOR MATERIALS; SYNTHESIS; WATER VAPOR
- Descriptors DEC
- CATALYSIS; FLUIDS; GASES; MATERIALS; SALTS; VAPORS
Optional Information
- Copyright
- Copyright (c) 2020 Elsevier B.V. All rights reserved.