Spectral Ellipsometry Study of Silicon Surfaces Implanted with Oxygen and Helium Ions

Results are given for a spectral ellipsometry study of silicon surfaces implanted with oxygen ions in the dose range 7.5·10¹⁴–3.7·10¹⁶ ions/cm² and helium ions in the range 6·10¹⁶–6·10¹⁷ ions/cm² with energy 40 keV at constant ion current density 2 μA/cm². The irradiated substrates were at room temperature. Curves are shown for the dependence of the thickness of the implanted layer in the irradiated plates and the dependence of the extent of amorphization of this layer on the ion implantation dose.