Enhancing photodetection performance and thermal tolerance of CdS thin films through cobalt (Co) doping
Creators
- 1. Shri Datta Arts, Commerce and Science College Hadgaon, Hadgaon, 431712 (India)
- 2. Thin film and Device Laboratory, School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded, 431606 (India)
- 3. Department of Physics, N.E.S. Science College, Nanded, 431602 (India)
- 4. RUSA Centre for Advanced Sensor Technology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad, 431004 (India)
- 5. Department of Physics, School of Basic and Applied Sciences, Central University of Punjab, Bhatinda, 151001 (India)
- 6. Department of Surface Engineering and Optoelectronics (F4), Jozef Stefan Institute, Ljubljana, 1000 (Slovenia)
Description
A visible light photodetector is developed using cobalt (Co)-doped cadmium sulfide (CdS) thin films that exhibits outstanding characteristics with a photocurrent of 284 µA, responsivity of 13.2 A W, an extraordinary external quantum efficiency (EQE) of 4550%, exceptional sensitivity (2.84 × 10%), and a rapid response time of 0.6 ms. These remarkable properties are most pronounced in 1 wt% Co-doped CdS device and decrease with higher Co doping concentrations. This enhanced performance is attributed to the introduction of a defect energy band (DEB) near the CdS valence band, supported by UV-Vis absorption spectra with a distinct feature at 744 nm. This DEB remains fully populated at room temperature and plays a vital role in responding to temperature variations. Our investigation reveals that 1 wt% Co-doped CdS device exhibits significant (90%) thermal tolerance compared to pure CdS (10%) and higher Co doping concentrations (20%) in the temperature range of 27-110 °C. This improved thermal stability is attributed to the optimal Co doping concentration, striking a balance between thermal and photo-excitation processes, thereby stabilizing the photocurrent. This research offers valuable insights into Co-doped CdS thin films, promising robust and reliable photodetection devices, particularly suitable for applications with fluctuating temperatures. (© 2023 Wiley‐VCH GmbH)
Additional details
Identifiers
Publishing Information
- Journal Title
- Advanced Engineering Materials
- Journal Volume
- 26
- Journal Issue
- 5
- Journal Page Range
- p. 1-11
- ISSN
- 1438-1656
- CODEN
- AENMFY
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 55040024
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTRA; CADMIUM SULFIDES; COBALT; DOPED MATERIALS; PHOTOCURRENTS; PHOTODETECTORS; QUANTUM EFFICIENCY; SENSITIVITY; TEMPERATURE DEPENDENCE; THIN FILMS; TOLERANCE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CURRENTS; EFFICIENCY; ELECTRIC CURRENTS; ELEMENTS; FILMS; INORGANIC PHOSPHORS; MATERIALS; METALS; PHOSPHORS; SPECTRA; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- AID: 2301572