Published December 26, 2005 | Version v1
Journal article Metadata-only

Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity

Creators

  • 1. IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)
  • 2. IBM Research GmbH, Zurich Research Laboratory, 8803 Rueschlikon (Switzerland)

Description

We use the reflection high-energy electron diffraction oscillation phase shift to monitor the stability of the Sr barrier, prepared by exposure of Si(100) to Sr at high temperatures, in situ during molecular beam epitaxy growth of (Ba,Sr)O on Si(100). Our results confirm that the deposition of additional metallic Sr at low temperature is essential for preventing the incorporation of the Sr termination layer in the (Ba,Sr)O layer during its growth, and for obtaining monolayer thin (Ba,Sr)O layers with good crystallinity and minimal density of interfacial Si-O bonds on Si(100)

Additional details

Identifiers

DOI
10.1063/1.2158018;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
87
Journal Issue
26
Journal Page Range
p. 262905-262905.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37081128
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BARIUM OXIDES; CRYSTAL GROWTH; DEPOSITION; ELECTRON DIFFRACTION; LAYERS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; OXIDATION; PHASE SHIFT; REFLECTION; SILICON; STRONTIUM OXIDES
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELEMENTS; EPITAXY; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SEMIMETALS; STRONTIUM COMPOUNDS

Optional Information

Notes
(c) 2005 American Institute of Physics