Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals
- 1. State Key Laboratory of Structural Chemistry, Fuzhou, Fujian 350002 (China)
- 2. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)
Description
Currently, tripositive lanthanide (Ln3+) ions doped wide band-gap semiconductor nanocrystals (NCs) have been the focus of research interest due to their distinct optical properties and potential applications in optical devices and luminescent biolabels. Because of the low absorptions of parity-forbidden 4f-4f transitions for Ln3+, it is highly anticipated that the luminescence of Ln3+ ions embedded in wide band-gap NC lattices can be sensitized efficiently via exciton recombination in the host. For this purpose, the successful incorporation of Ln3+ into the lattices of semiconductor NCs is of utmost importance, which still remains intractable via conventional wet chemical methods. Here, the most recent progress in the optical spectroscopy of Ln3+ ions doped wide band-gap semiconductor NCs is discussed. Much attention was focused on the optical properties including electronic structures, luminescence dynamics, energy transfer as well as the up-conversion emissions of Ln3+ ions in ZnO, TiO2, SnO2 and In2O3 NCs that were synthesized in our laboratory using wet chemical methods.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jlumin.2010.07.018Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2010.07.018;
- PII
- S0022-2313(10)00317-0;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 131
- Journal Issue
- 3
- Journal Page Range
- p. 415-422
- ISSN
- 0022-2313
- CODEN
- JLUMA8
Conference
- Title
- 17. international conference on dynamical processes in excited states of solids
- Acronym
- DPC'10
- Dates
- 20-25 Jun 2010
- Place
- Argonne, IL (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42082928
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY TRANSFER; INDIUM OXIDES; IONS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RARE EARTHS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TIN OXIDES; TITANIUM OXIDES; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; EMISSION; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; SORPTION; TIN COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.