Published March 2011 | Version v1
Journal article

Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals

  • 1. State Key Laboratory of Structural Chemistry, Fuzhou, Fujian 350002 (China)
  • 2. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

Description

Currently, tripositive lanthanide (Ln3+) ions doped wide band-gap semiconductor nanocrystals (NCs) have been the focus of research interest due to their distinct optical properties and potential applications in optical devices and luminescent biolabels. Because of the low absorptions of parity-forbidden 4f-4f transitions for Ln3+, it is highly anticipated that the luminescence of Ln3+ ions embedded in wide band-gap NC lattices can be sensitized efficiently via exciton recombination in the host. For this purpose, the successful incorporation of Ln3+ into the lattices of semiconductor NCs is of utmost importance, which still remains intractable via conventional wet chemical methods. Here, the most recent progress in the optical spectroscopy of Ln3+ ions doped wide band-gap semiconductor NCs is discussed. Much attention was focused on the optical properties including electronic structures, luminescence dynamics, energy transfer as well as the up-conversion emissions of Ln3+ ions in ZnO, TiO2, SnO2 and In2O3 NCs that were synthesized in our laboratory using wet chemical methods.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2010.07.018

Additional details

Identifiers

DOI
10.1016/j.jlumin.2010.07.018;
PII
S0022-2313(10)00317-0;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
131
Journal Issue
3
Journal Page Range
p. 415-422
ISSN
0022-2313
CODEN
JLUMA8

Conference

Title
17. international conference on dynamical processes in excited states of solids
Acronym
DPC'10
Dates
20-25 Jun 2010
Place
Argonne, IL (United States)

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.