Simultaneous boron and hydrogen profiling in gas-phase-doped hydrogenated amorphous silicon

Concentration profiles of hydrogen and boron in amorphous silicon have been simultaneously measured using the method of elastic recoil detection analysis. Boron concentrations are compared with the results of a chemical analysis. The recoil method is shown to be a rapid and accurate non-destructive technique for the depth profiling of light impurity atoms. Its simultaneous multielement capability is of particular value in the growing field of amorphous silicon technology where both hydrogen and boron concentrations are critical to device operation. (Auth.)