Semi-insulating CdTe with a minimum deep level doping

Quasichemical formalism is used to study self-compensation and reactions of point defects during annealing and successive cooling with aim to find a technique to prepare semi-insulating CdTe (SICT) with minimized deep level doping. We present a theoretical model which provides SICT also in 7N or less purity material with deep level density below the limit 1013 cm-3 which is demanded for detector grade CdTe. The principle of the method is based on a proper thermal treatment with the low temperature dwell and the defect reaction between shallow acceptor Cd vacancies and shallow donor Te antisite. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)