Published November 2007
| Version v1
Journal article
Cathodoluminescence from dilute GaNxAs1-x solutions (x ≤ 0.03)
- 1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Description
Cathodoluminescence from GaNxAs1-x layers (0 ≤ x ≤ 0.03) was measured at photon energies ranging from the intrinsic absorption edge to 3 eV at room temperature. An additional emission band was visible in the visible range of the cathodoluminescence spectra. The intensity of this band is two orders of magnitude lower than the edge-emission intensity. The photon energy corresponding to the peak of this band and its FWHM are virtually independent of x and equal to ∼2.1 and 0.6-0.7 eV, respectively. This emission is related to indirect optical transitions of electrons from the L6c and Δ conduction-band minimums to the Γ15 valence-band maximum
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 41
- Journal Issue
- 11
- Journal Page Range
- p. 1297-1299
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39098042
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; ARSENIDES; CATHODOLUMINESCENCE; GALLIUM COMPOUNDS; LAYERS; NITRIDES; PHOTONS; SPECTRA; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- ARSENIC COMPOUNDS; BOSONS; ELEMENTARY PARTICLES; EMISSION; LUMINESCENCE; MASSLESS PARTICLES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SORPTION; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2007 Pleiades Publishing, Ltd.