Published October 1, 2013 | Version v1
Journal article

Effect of glass tempering on microstructure and functional properties of SnO2:F thin film prepared by atmosphere pressure chemical vapor deposition

  • 1. State Key Laboratory for Silicon Materials and Center for Electron Microscopy, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 (China)
  • 2. Hangzhou Bluestar New Materials Technology Co., Ltd, Hangzhou, 310012 (China)

Description

The low-emission glass was prepared via depositing fluorine-doped tin oxide thin film on glass substrate by atmospheric pressure chemical vapor deposition method. The as-deposited low-emission glass was found to present a SnO2:F/SiCxOy/glass sandwich structure via focused ion beam technique and transmission microscopic measurement. After tempering process at ∼ 650 °C with varied periods, the electrical and optical properties of the SnO2:F thin film remained stable for less than 10 min, but decreased dramatically when the tempering period exceeded 10 min, which was mainly due to the oxygen chemisorptions and fluorine ion diffusion. It was observed that the SnO2:F thin films presented uniform polycrystalline nature of cassiterite structure throughout the tempering process. The study has therefore suggested the appropriate tempering conditions for the SnO2:F low-emission glass, and provided a critical guidance for further energy-saving glass applications. - Highlights: • The sandwich structural low-e glass was prepared on an industrial line. • The film showed stable morphology and functional property under low temperature. • The functional property decreased dramatically after long time tempering at 650 °C

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2013.02.099

Additional details

Identifiers

DOI
10.1016/j.tsf.2013.02.099;
PII
S0040-6090(13)00369-6;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
544
Journal Page Range
p. 357-361
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
6. international conference on technological advances of thin films and surface coatings
Dates
14-17 Jul 2012
Place
Singapore (Singapore)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46090334
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; DEPOSITS; DIFFUSION; DOPED MATERIALS; EMISSION; FLUORINE IONS; GLASS; MICROSTRUCTURE; OPTICAL PROPERTIES; OXYGEN; POLYCRYSTALS; SILICON CARBIDES; SUBSTRATES; THIN FILMS; TIN OXIDES
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL COATING; CRYSTALS; DEPOSITION; ELEMENTS; FILMS; IONS; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SURFACE COATING; TIN COMPOUNDS

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.