Giant burst of impact ionization in a p-n junction of the 6H-SiC polytype
Creators
- 1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Description
A study of the electron component of impact ionization in the p+-n--n+ junction in the 6HSiC polytype made it possible to detect a giant burst of impact ionization and origination of an extra early avalanche breakdown. The electric field of this breakdown is lower by ∼20% than the electric field of the breakdown arising as a result of a steady development of the impact ionization. It is of interest that this phenomenon occurs abruptly, without any apparent causes, in particular, without an increase in the dark current characteristic of a prebreakdown state of the p-n junction. Conditions for origination of an unusual breakdown and its properties made it possible to assume that there are nonlinear processes that give rise to a streamer. In the p-n junction plane, the anomalous breakdown is seen as a narrow glowing track with a width of ∼10 μm. This effect takes place in the conditions of the Wannier-Stark ladder of states. The latter can stimulate a local accumulation of charge and formation of a streamer structure.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 42
- Journal Issue
- 12
- Journal Page Range
- p. 1408-1412
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41006181
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BREAKDOWN; ELECTRIC FIELDS; ELECTRONS; IONIZATION; P-N JUNCTIONS; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Pleiades Publishing, Ltd.