Published December 2008 | Version v1
Journal article

Giant burst of impact ionization in a p-n junction of the 6H-SiC polytype

  • 1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Description

A study of the electron component of impact ionization in the p+-n--n+ junction in the 6HSiC polytype made it possible to detect a giant burst of impact ionization and origination of an extra early avalanche breakdown. The electric field of this breakdown is lower by ∼20% than the electric field of the breakdown arising as a result of a steady development of the impact ionization. It is of interest that this phenomenon occurs abruptly, without any apparent causes, in particular, without an increase in the dark current characteristic of a prebreakdown state of the p-n junction. Conditions for origination of an unusual breakdown and its properties made it possible to assume that there are nonlinear processes that give rise to a streamer. In the p-n junction plane, the anomalous breakdown is seen as a narrow glowing track with a width of ∼10 μm. This effect takes place in the conditions of the Wannier-Stark ladder of states. The latter can stimulate a local accumulation of charge and formation of a streamer structure.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
42
Journal Issue
12
Journal Page Range
p. 1408-1412
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41006181
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BREAKDOWN; ELECTRIC FIELDS; ELECTRONS; IONIZATION; P-N JUNCTIONS; SILICON CARBIDES
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS

Optional Information

Copyright
Copyright (c) 2008 Pleiades Publishing, Ltd.