Two-dimensional CuIn1−xGaxSe2 nano-flakes by pulse electrodeposition for photovoltaic applications

Fabrication of Cu(In,Ga)Se₂ (CIGS) absorber layers containing two-dimensional nano-flake structures using a single stage pulse electrodeposition technique is reported for the first time, wherein CuCl₂, InCl₃, GaCl₃ and H₂SeO₃ are used as precursors in a pH 3 buffer. The method employs tri-sodium citrate as complexing agent. The phenomenon of intrinsic electrochemical dissolution associated with pulse electrodeposition technique is efficiently utilized to obtain CIGS nano-flakes. The presence of tri-sodium citrate and the relaxation time during pulse electrodeposition play crucial role in achieving control over composition and morphology of CIGS films thereby aiding in the formation of nano-flakes. Evolution of nano-flake structures is systematically investigated with the increase in deposition time during pulse electrodeposition. Elemental analysis reveals the stoichiometric composition of nano-flake films while the formation of chalcopyrite phase-pure CIGS is confirmed by XRD and Raman analyses. The bandgap of CIGS nano-flakes is inferred to be about 1.21 eV from Tauc's plot. Mott-Schottky studies unveil the p-type conductivity of the CIGS with a flat-band potential and carrier density values of −0.15 V and 5.2 × 10¹⁶ cm⁻³, respectively. Photoelectrochemical characterization of CIGS films affirms their photoactivity and the photoresponse is almost 20 times compared to the traditional planar CIGS films. Nanostructured CIGS films fabricated by low-cost pulse electrodeposition method reduce materials consumption while promising excellent photoresponse and are suitable for photovoltaic and photoelectrochemical applications.