Published June 30, 2005 | Version v1
Journal article Metadata-only

Transparent p-ZnO by oxidation of Zn-based compounds

Creators

  • 1. Institute of Electron Technology, Warsaw (Poland)
  • 2. ERATO Semiconductor Spintronics (Poland)
  • 3. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 4. Institute of Electron Technology, Warsaw, (Poland)

Description

We report on the fabrication of ZnO:N by thermal oxidation of Zn-based compounds. In particular, we achieved p-type conductivity with carrier concentration in mid 1017 cm-3 range and mobility of ∼10 cm2/Vs using sputter-deposited zinc nitride as starting material. The transmittance of p-ZnO:N in the whole visible spectrum is 70-80% making it very interesting for transparent electronics

Additional details

Identifiers

DOI
10.1063/1.1994055;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
772
Journal Issue
1
Journal Page Range
p. 185-186
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
27. international conference on the physics of semiconductors
Acronym
ICPS-27
Dates
26-30 Jul 2004
Place
Flagstaff, AZ (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37031349
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CARRIER MOBILITY; DEPOSITION; FABRICATION; OPACITY; OXIDATION; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS; VISIBLE SPECTRA; ZINC NITRIDES; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; CHEMICAL REACTIONS; FILMS; MATERIALS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SPECTRA; ZINC COMPOUNDS

Optional Information

Notes
(c) 2005 American Institute of Physics