Formation of vacancy-impurity complexes in highly As- and P-doped Si

Positron lifetime and coincidence Doppler broadening measurements have been conducted to identify the defects formed during the annealing of electron irradiated highly As- and P-doped Si. We show that the vacancy-donor pairs (V-D1) formed during the electron irradiation migrate to form V-D2 at 450 K which in turn transform to V-D3 at 700 K. We furthermore show that the V-As3 defects anneal at 1100 K and that the formation and annealing of the V-D3 defects can explain the electrical compensation observed in highly doped Si