Published August 16, 1993
| Version v1
Journal article
Ion beam mixing at metal-oxide interfaces
Creators
- 1. Pontificia Univ. Catolica do Rio de Janeiro, RJ (Brazil). Dept. de Fisica
- 2. Rio Grande do Sul Univ., Porto Alegre, RS (Brazil). Inst. de Quimica
Description
Atomic mixing at Cr-SiO2 interfaces induced by noble gas (Ar, Kr and Xe) ion bombardment was studied by means of Rutherford backscattering spectrometry. The amount of mixing was determined as a function of fluence (1-20 1015 ions cm-2), substrate temperature (300-800 K) and deposited energy at the interface. These results indicate the prevalence of the ballistic mixing mechanism. (author)
Additional details
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 5
- Journal Issue
- suppl.33A
- Journal Page Range
- p. A301-A302.
- ISSN
- 0953-8984
- CODEN
- JCOMEL
Conference
- Title
- 7. Latin-American symposium on surface science.
- Acronym
- SLAFS7-CIACSA1
- Dates
- 15-20 Nov 1992.
- Place
- Bariloche (Argentina).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 24076539
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARGON IONS; BACKSCATTERING; CHROMIUM; ENERGY DEPOSITION; INTERFACES; ION BEAMS; ION IMPLANTATION; KRYPTON IONS; MASS TRANSFER; MIXING; RUTHERFORD SCATTERING; SILICON OXIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; XENON IONS
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; ELASTIC SCATTERING; ELEMENTS; IONS; METALS; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENTS