Self-heating effects in silicon nano scale MOSFET (a multi scale modeling approach)

In this work we present a novel multi scale simulation approach that combines circuit level with device level simulations together with experimental measurements to uncover the temperature of the hot-spot at nano scale MOSFET devices. The circuit level simulation is performed with COMSOL simulation software. This allows one to perform electro-thermal modeling given the input Joule heating terms, the magnitude and the location of which is determined with more physically-based electro-thermal Monte Carlo device simulator. Simulation results obtained with this simulator are in agreement with experimental measurements from IMEC using specialized heater-sensor test structures in common-source and common-drain configurations. (author)