Published April 4, 2011
| Version v1
Journal article
Response to 'Comment on 'Fourfold symmetric anisotropic magnetoresistance based on magnetocrystalline anisotropy and antiphase boundaries in reactive sputtered epitaxial Fe3O4 films'' [Appl. Phys. Lett. 98, 146101 (2010)]
Creators
- 1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072 (China)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.3575516;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 98
- Journal Issue
- 14
- Journal Page Range
- p. 146102-146102.2
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42109028
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANISOTROPY; BOUNDARY CONDITIONS; CRYSTALS; DEPOSITION; EPITAXY; FERRITES; FILMS; IRON OXIDES; LAYERS; MAGNETIC MATERIALS; MAGNETORESISTANCE; SPUTTERING; SYMMETRY; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FERRIMAGNETIC MATERIALS; FILMS; IRON COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2011 American Institute of Physics