Atomic processes in semiconductor crystals

The formation of a new field in the radiation physics of semiconductors and semiconductor technology under the general guidance and with the direct participation of the late A. V. Rzhanov is reviewed historically. This line of research gave rise to a multitude of practical applications; however, most importantly, it forced scientists to radically change the established concepts of reactions in semiconductor crystals by taking into account the mobile defect-impurity subsystem susceptible to external factors. The concepts developed form the basis for considering the processes at the atomic level, especially during the formation and modification of active clusters and nanoobjects