Published March 22, 2010
| Version v1
Journal article
Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
- 1. Institut d'Electronique, de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincare, B.P. 60069, 59652 Villeneuve d'Ascq (France)
- 2. Polymer and Materials Chemistry, Lund University, Box 124, S-22100 Lund (Sweden)
- 3. Solid State Physics, Lund University, Box 118, S-22100 Lund (Sweden)
Description
Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.
Additional details
Identifiers
- DOI
- 10.1063/1.3367746;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 96
- Journal Issue
- 12
- Journal Page Range
- p. 121901-121901.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41078524
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; CRYSTAL GROWTH; FABRICATION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; GOLD; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SILICON; STACKING FAULTS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; METALS; NANOSTRUCTURES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2010 American Institute of Physics