Published December 2018 | Version v1
Journal article

Impedance and photosensitivity spectra of nanocomposite structures based on layered semiconductor InSe and ionic salt RbNO3

  • 1. Frantsevich Institute for Problems of Materials Science, The National Academy of Sciences of Ukraine, Chernivtsi (Ukraine)

Description

Photoelectric properties of vertical ionotronic nanostructures based on layered semiconductor InSe and ionic salt RbNO3 are investigated. It is shown that the nanostructures consisting of 2D InSe layers, ultrathin layers of In2O3 oxide, and ionic salt ring-shaped nanostructures, which are located in the (0001) planes of InSe crystal and periodically along its crystallographic C axis, have a high photosensitivity. (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.201800460

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi A. Applications and Materials Science (Online)
Journal Volume
215
Journal Issue
24
Journal Page Range
p. 1-4
ISSN
1862-6319

Optional Information

Notes
With 6 figs.