Published December 2018
| Version v1
Journal article
Impedance and photosensitivity spectra of nanocomposite structures based on layered semiconductor InSe and ionic salt RbNO3
Creators
- 1. Frantsevich Institute for Problems of Materials Science, The National Academy of Sciences of Ukraine, Chernivtsi (Ukraine)
Description
Photoelectric properties of vertical ionotronic nanostructures based on layered semiconductor InSe and ionic salt RbNO3 are investigated. It is shown that the nanostructures consisting of 2D InSe layers, ultrathin layers of In2O3 oxide, and ionic salt ring-shaped nanostructures, which are located in the (0001) planes of InSe crystal and periodically along its crystallographic C axis, have a high photosensitivity. (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssa.201800460Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi A. Applications and Materials Science (Online)
- Journal Volume
- 215
- Journal Issue
- 24
- Journal Page Range
- p. 1-4
- ISSN
- 1862-6319
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 50019039
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BRIDGMAN METHOD; CAPACITANCE; CAPACITORS; COMPOSITE MATERIALS; ELECTRIC IMPEDANCE; FREQUENCY DEPENDENCE; INDIUM SELENIDES; IONIC CONDUCTIVITY; LAYERS; NANOSTRUCTURES; PHOTOSENSITIVITY; RUBIDIUM NITRATES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ALKALI METAL COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; IMPEDANCE; INDIUM COMPOUNDS; MATERIALS; NITRATES; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RUBIDIUM COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; SENSITIVITY
Optional Information
- Notes
- With 6 figs.