Published September 1, 2007
| Version v1
Journal article
Evaluation of OKI SOI technology
Creators
- 1. IPNS, High Energy Accelerator Research Organization, KEK, Tsukuba, Ibaraki 305-0801 (Japan)
- 2. Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571 (Japan)
- 3. ISAS, Japan Aerospace Exploration Agency, Kanagawa 229-8510 (Japan)
- 4. Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551 (Japan)
- 5. Department of Physics, Graduate School of Science, Osaka University, Osaka 560-0043 (Japan)
Description
The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fabricated and irradiated with protons. The first results are presented
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2007.05.272Additional details
Identifiers
- DOI
- 10.1016/j.nima.2007.05.272;
- PII
- S0168-9002(07)01166-7;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 579
- Journal Issue
- 2
- Journal Page Range
- p. 706-711
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 6. 'Hiroshima' symposium on the development and application of semiconductor detectors
- Dates
- 11-15 Sep 2006
- Place
- Carmel, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39060970
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITANCE; EVALUATION; INDUSTRY; IRRADIATION; PROTONS; RADIATION EFFECTS; SILICON; STANDARDS; TRANSISTORS
- Descriptors DEC
- BARYONS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; NUCLEONS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.