Published June 21, 2004
| Version v1
Journal article
High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature
Creators
- 1. Institute of Semiconductor, Chinese Academy of Sciences P.O. Box 912, Beijing 100083 (China)
Description
High-indium-content InxGa1-xAs/GaAs single/multi-quantum well (SQW/MQW) structures have been systematically investigated. By optimizing the molecular-beam epitaxy growth conditions, the critical thickness of the strained In0.475Ga0.525As/GaAs QWs is raised to 7 nm, which is much higher than the value given by the Matthews and Blakeslee model. The good crystalline quality of the strained InGaAs/GaAs MQWs is proved by x-ray rocking curves. Photoluminescence measurements show that an emission wavelength of 1.25 μm at room temperatures with narrower full width at half maximum less than 30 meV can be obtained. The strain relaxation mechanism is discussed using the Matthews-Blakeslee model
Additional details
Identifiers
- DOI
- 10.1063/1.1762985;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 84
- Journal Issue
- 25
- Journal Page Range
- p. 5100-5102
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36047646
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- GALLIUM ARSENIDES; INDIUM ARSENIDES; MEV RANGE 10-100; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; STRESS RELAXATION; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EMISSION; ENERGY RANGE; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MEV RANGE; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; RELAXATION; SCATTERING; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2004 American Institute of Physics.