Published October 2006 | Version v1
Journal article Metadata-only

Study of proton irradiated p-type and n-type silicon wafers by method of an positron annihilation spectroscopy

Creators

  • 1. Moskovskij Gosudarstvennyj Inst. Ehlektronnoj Tekhniki (MIEhT), Zelenograd, Moscow (Russian Federation)
  • 2. FGUP GNTs RF Inst. Teoreticheskoj i Ehksperimental'noj Fiziki im. A.I. Alikhanova, Moscow (Russian Federation)

Description

Proton irradiated silicon wafers are investigated by means of positron spectroscopy (angular correlation of annihilation radiation, ACAR). Analysis of experimental ACAR spectra and their difference in irradiated and nonirradiated samples as well as the solution of the kinetic equations for formation, transformations and annihilation of the Wheeler positron states, allow for the first time, to measure concentration of radiation defects

Abstract (Russian)

Рассмотрены подходы, используемые для определения концентрации и структуры дефектов кремния методом позитронной аннигиляционной спектроскопии. Посредством измерения углового распределения аннигиляционных фотонов (УРАФ) исследован процесс аннигиляции позитронов в пластинах кремния, облученных протонами. Анализ кривых УРАФ облученных и необлученных образцов и решение кинетических уравнений образования, превращений и аннигиляции позитронных состояний позволило впервые определить концентрации радиационных дефектов в кремнии

Additional details

Additional titles

Original title (Russian)
Изучение методом позитронной аннигиляционной спектроскопии пластин кремния с различной обработкой поверхности
Augmented title (English)
radiation defects

Publishing Information

Journal Title
Poverkhnost'. Rentgenovskie, Sinkhrotronnye i Nejtronnye Issledovaniya
Journal Issue
no.10
Journal Page Range
p. 5-9
ISSN
1028-0960

Conference

Title
17. International conference On ion-surface interactions (ISI-2005)
Original Conference Title
XVII Mezhdunarodnaya konferentsiya Vzaimodejstvie ionov s poverkhnost'yu (VIP-2005)
Dates
25-29 Aug 2005
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
39021343
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNIHILATION; COMPARATIVE EVALUATIONS; CRYSTAL DEFECTS; ELECTRONS; PHYSICAL RADIATION EFFECTS; POSITRONS; PROTON BEAMS; SILICON; SPECTROSCOPY
Descriptors DEC
ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; BEAMS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; EVALUATION; FERMIONS; INTERACTIONS; LEPTONS; MATTER; NUCLEON BEAMS; PARTICLE BEAMS; PARTICLE INTERACTIONS; RADIATION EFFECTS; SEMIMETALS

Optional Information

Notes
21 refs., 1 tab.