Published February 9, 2009 | Version v1
Journal article Metadata-only

Point defects in sputtered NiO films

Creators

  • 1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan, 70101 (China)
  • 2. Graduate Institute of Electro-Optical Engineering, National University of Tainan, Tainan, Taiwan, 70005 (China)
  • 3. Department of Environmental Engineering, National Cheng Kung University, Tainan, Taiwan, 70101 (China)

Description

The dominant point defects in p-type NiO films were determined by analyzing the coordination number (CN) change with various annealing temperatures and the composition profile of double-layer films deposited individually in oxygen and in argon atmospheres. The results show that the nonstoichiometry of sputtered NiO film is determined by the number of nickel atoms rather than by the number of oxygen atoms. It is concluded that nickel vacancies are the dominant point defects that result in the electrical conductivity of NiO films

Additional details

Identifiers

DOI
10.1063/1.3081025;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
94
Journal Issue
6
Journal Page Range
p. 062103-062103.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40051334
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ARGON; ATMOSPHERES; COORDINATION NUMBER; CRYSTALS; DEPOSITION; ELECTRIC CONDUCTIVITY; LAYERS; NICKEL; NICKEL OXIDES; OXYGEN; SEMICONDUCTOR MATERIALS; SPUTTERING; STOICHIOMETRY; THIN FILMS; VACANCIES
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; FLUIDS; GASES; HEAT TREATMENTS; MATERIALS; METALS; NICKEL COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; RARE GASES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
(c) 2009 American Institute of Physics