Published June 15, 2009
| Version v1
Journal article
The structural and magnetic properties of τ-MnAl films prepared by Mn/Al multilayers deposition plus annealing
Creators
- 1. Key Lab of Advanced Photonic Materials and Devices, Laboratory of Advanced Materials and Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)
- 2. Department of Physics, Fudan University, Shanghai 200433 (China)
Description
The structural and magnetic properties of τ-MnAl alloy films are studied. The films are derived by annealing from Mn/Al multilayers. τ-MnAl appears when the annealing temperature increases up to 350 deg. C, but decomposes into γ2-MnAl and β-Mn at 500 deg. C annealing. Good magnetic properties are obtained after 400-450 deg. C annealing. Furthermore, τ-MnAl forms in the Mn-Al interface. The saturation magnetization MS increases first with the thickness of Mn (or Al) layers, and then decreases in inverse proportion to that of Mn (or Al) layers. The turning point implies that the thickness of τ-MnAl is no more than 5 nm in the Mn60Al40 films.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2009.04.005Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2009.04.005;
- PII
- S0921-5107(09)00139-1;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 162
- Journal Issue
- 3
- Journal Page Range
- p. 185-188
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41029123
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; ANNEALING; DEPOSITION; FILMS; LAYERS; MAGNETIC PROPERTIES; MAGNETIZATION; MANGANESE ALLOYS; SATURATION; TEMPERATURE RANGE 0400-1000 K; THICKNESS
- Descriptors DEC
- ALLOYS; DIMENSIONS; HEAT TREATMENTS; PHYSICAL PROPERTIES; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.