Published April 1992 | Version v1
Journal article Metadata-only

Study of fission fragments channeling in silicon monocrystals

Creators

  • 1. Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation)

Description

The research results of 235U fission fragments channeling in silicon semiconductor detectors of heavy ions are reported. The analysis of the pulse height defect enabled to obtain the experimental relationship between energy losses in silicon due to nuclear collisions and the energy of fission fragments in LSS-units. The experimental values obtained more than twice exceed the computed ones given by Heines and Whitehead based on Lindhard's theory. (author)

Additional details

Publishing Information

Journal Title
Radiation Effects and Defects in Solids
Journal Volume
124
Journal Issue
2
Series
Radiat. Eff. Defects Solids.
Journal Page Range
191-196
ISSN
1042-0150
CODEN
REDSE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
23085127
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABSORPTION; CHANNELING; ENERGY LOSSES; FISSION FRAGMENTS; HEAVY IONS; SI SEMICONDUCTOR DETECTORS; URANIUM 235
Descriptors DEC
ACTINIDE NUCLEI; ALPHA DECAY RADIOISOTOPES; CHARGED PARTICLES; EVEN-ODD NUCLEI; HEAVY NUCLEI; INTERNAL CONVERSION RADIOISOTO; IONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MEASURING INSTRUMENTS; MINUTES LIVING RADIOISOTOPES; NUCLEAR FRAGMENTS; NUCLEI; RADIATION DETECTORS; RADIOISOTOPES; SEMICONDUCTOR DETECTORS; SORPTION; SPONTANEOUS FISSION RADIOISOTO; URANIUM ISOTOPES; YEARS LIVING RADIOISOTOPES