Published December 1996 | Version v1
Journal article Metadata-only

Selection of efficient etchants for nondestructive treatment of semiconductors

Creators

  • 1. AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Poluprovodnikov

Description

The scheme for studying etching processes of semiconductor materials and developing new etchants for different semiconductors is proposed. The scheme includes the experiment mathematical planning, computerized physicochemical modeling, kinetic studies, investigation of surface layers, formed by etching. Such on approach makes it possible to optimize the etchant composition in every concrete cage. The scheme is tested in the course of developing optimal methodologies of preepitaxial treatment and selection of etchants composition for semiconductor compounds of the A1B6 and A3B5 type. 13 refs., 4 figs

Additional details

Additional titles

Original title (Russian)
Подбор и оптимизация состава травителей для бездефектной обработки полупроводниковых материалов

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
32
Journal Issue
12
Journal Page Range
p. 1473-1476.
ISSN
0002-337X
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
28048881
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AQUEOUS SOLUTIONS; CADMIUM TELLURIDES; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; ETCHING; HYDROFLUORIC ACID; INDIUM ARSENIDES; NITRIC ACID; PHASE STUDIES; SEMICONDUCTOR MATERIALS; SULFURIC ACID; SURFACE FINISHING
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; DISPERSIONS; FLUORINE COMPOUNDS; HALOGEN COMPOUNDS; HOMOGENEOUS MIXTURES; HYDROGEN COMPOUNDS; INDIUM COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; MATERIALS; MIXTURES; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; PNICTIDES; SIMULATION; SOLUTIONS; SULFUR COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS