Published April 1985 | Version v1
Journal article

Growth of In-doped CdTe and its application for γ-ray detector

  • 1. Tohoku Univ., Sendai (Japan). Dept. of Materials Science
  • 2. Tohoku Inst. of Tech., Sendai (Japan). Dept. of Electronic Engineering

Description

CdTe single crystals with In doping of approx. 100 ppm to total weight were grown from excess Te solution. It seems that the electrical conductivity is dominated by a highly compensated shallow donor. A detector of the surface barrier type was fabricated by depositing electroless Au on both sides of the cleaved face. These detectors showed good responses for 241Am and 133Ba γ-rays under low bias voltage 3-7 V. This suggests the possibility for application to a handy detector. (Auth.)

Additional details

Publishing Information

Journal Title
Mater. Lett.
Journal Volume
3
Journal Issue
5-6
Series
Mater. Lett.
Journal Page Range
219-221
ISSN
0167-577X