Published January 15, 1982 | Version v1
Journal article

Statistical model for the formation of excited atoms in the sputtering process

Creators

  • 1. IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

Description

The formation of excited neutral atoms in the sputtering process has not previously been satisfactorily explained. It is shown that a reasonable description can be developed by the consideration of the inelastic energy transfer in the final collision associated with the sputtering of a surface atom. For low enough kinetic energies this inelastic energy transfer is proportional to the kinetic energy given to the sputtered atom. The result is an expression which reproduces in detail experimental measurements of the relative yields of sputtered excited atoms, and gives reasonable agreement with experiment regarding their kinetic energies and absolute yields. The expression equates the yield of the ith state to 2g/sub i/UKΣ/sup infinity//sub k/ = iG-1/sub k/ (epsilon-1/sub k/-epsilon-1/sub k/+1), where g/sub i/ is the degeneracy, U is the surface binding energy, G/sub i/ is the cumulative degeneracy (namely, G/sub i/ = g0+g1+g2+xxx+g/sub i/), and epsilon/sub i/ is the excitation energy

Additional details

Publishing Information

Journal Title
Phys. Rev., B: Condens. Matter
Journal Volume
25
Journal Issue
2
Series
Phys. Rev., B: Condens. Matter.
Journal Page Range
700-712
ISSN
0163-1829

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
13676399
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS;
Descriptors DEI
ATOMS; ENERGY TRANSFER; EXCITATION; INELASTIC SCATTERING; SCALING LAWS; SOLIDS; SPUTTERING; STATISTICAL MODELS
Descriptors DEC
ENERGY-LEVEL TRANSITIONS; MATHEMATICAL MODELS; SCATTERING