Characteristic properties of kinetic phenomena in semiconductors with damage regions

Expressions for Hall and Nernst constants are derived for semiconductors containing damage regions created by irradiation with high energy particles. The Hall factor is shown to be determined both by the carrier scattering mechanism and by the degree of the crystal damage. The increase of the damage region concentration leads to the change of the sign of the Nernst constant even when the scattering mechanism is essentially the same. For a strong magnetic field, the Nernst constant is independent of it (in contrast to the case of homogeneous semiconductors) and is determined by the degree of material damage