Published 1992
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Doping charge carriers in high Tc cuprates
Creators
- 1. Indian Inst. of Science, Bangalore (India). Solid State and Structural Chemistry Unit
Description
While the mechanism of doping charge carriers in cuprate superconductors is reasonably well understood in La2CuO4 and in YBa2Cu3O6+x, the doping mechanism of holes is not clear in bismuth and thallium cuprates. New compounds (BiPb cuprates), and a new chemical titration method of holes in Tl cuprates allow the comprehension of the hole doping. 6 refs
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Additional details
Publishing Information
- Imprint Title
- Superconductivity (New insights and current trends in high T_c superconductors)
- Imprint Pagination
- 106 p.
- Journal Page Range
- p. 16-17.
- Report number
- EUR--14160
Conference
- Title
- Workshop on Superconductivity.
- Dates
- 29 Jan - 2 Feb 1991.
- Place
- Bangalore (India).
INIS
- Country of Publication
- European Commission (EC), Brussels (Belgium)
- Country of Input or Organization
- European Commission (EC), Brussels (Belgium)
- INIS RN
- 24004579
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BARIUM COMPOUNDS; BISMUTH COMPOUNDS; CHARGE CARRIERS; COPPER OXIDES; CRYSTAL DOPING; CUPRATES; HIGH-TC SUPERCONDUCTORS; HOLES; LANTHANUM COMPOUNDS; LAYERS; SUPERCONDUCTIVITY; THALLIUM COMPOUNDS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS