Published August 1979
| Version v1
Journal article
Reply to ''Comment on 'Transverse 1/f noise in InSb thin films and the signal-to-noise ratio of related Hall elements' ''
- 1. Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Description
Noise formula describing the 1/f noise in InSb films is pointed out. The noise-intensity coefficient K is introduced as a variable depending on film-preparation methods. Experimentally, K2 changes by two orders of magnitude. However, existing noise calculations show that K2 should remain constant except for a dimension factor. Therefore, the experimental results cannot be explained by the existing theory
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 50
- Journal Issue
- 8
- Series
- J. Appl. Phys.
- Journal Page Range
- 5548
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11499301
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIMONY COMPOUNDS; CHARGE CARRIERS; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRODES; FILMS; HALL EFFECT; INDIUM COMPOUNDS; NOISE; QUANTITY RATIO; TEMPERATURE DEPENDENCE; THICKNESS; WIDTH
- Descriptors DEC
- DIMENSIONS