Published 1996
| Version v1
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Electron sheath collapse in an applied-B ion diode
Creators
- 1. Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik
Description
The effect of the electron sheath collapse in an applied-B ion diode due to the presence of the resistive anode plasma layer was found. This effect is more damaging at higher diode voltages and may be responsible for the parasitic load effect observed in the experiments. (author). 4 figs., 2 refs
Files
28056071.pdf
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Additional details
Publishing Information
- Imprint Title
- Beams '96. Proceedings of the 11th international conference on high power particle beams. Vol. II
- Imprint Pagination
- [692 p.].
- Journal Page Range
- p. 1139-1142.
- Report number
- INIS-CZ--0003
Conference
- Title
- 11. international conference on high power particle beams.
- Acronym
- Beams' 96
- Dates
- 10-14 Jun 1996.
- Place
- Prague (Czech Republic).
INIS
- Country of Publication
- Czech Republic
- Country of Input or Organization
- Czech Republic
- INIS RN
- 28056071
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANODES; BEAM EXTRACTION; BEAM PRODUCTION; BOUNDARY LAYERS; ELECTRONS; ION BEAMS; K CODES; MAGNETIC INSULATION; PLASMA MACROINSTABILITIES; PLASMA SHEATH; PLASMA SIMULATION; STABILITY; THERMIONIC DIODES
- Descriptors DEC
- BEAMS; COMPUTER CODES; DIODE TUBES; ELECTRODES; ELECTRON TUBES; ELEMENTARY PARTICLES; FERMIONS; INSTABILITY; LAYERS; LEPTONS; PLASMA INSTABILITY; SIMULATION; THERMIONIC TUBES