Published 1996 | Version v1
Miscellaneous Open

Electron sheath collapse in an applied-B ion diode

  • 1. Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik

Description

The effect of the electron sheath collapse in an applied-B ion diode due to the presence of the resistive anode plasma layer was found. This effect is more damaging at higher diode voltages and may be responsible for the parasitic load effect observed in the experiments. (author). 4 figs., 2 refs

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Part of:
Beams '96. Proceedings of the 11th international conference on high power particle beams. Vol. II

Additional details

Publishing Information

Imprint Title
Beams '96. Proceedings of the 11th international conference on high power particle beams. Vol. II
Imprint Pagination
[692 p.].
Journal Page Range
p. 1139-1142.
Report number
INIS-CZ--0003

Conference

Title
11. international conference on high power particle beams.
Acronym
Beams' 96
Dates
10-14 Jun 1996.
Place
Prague (Czech Republic).

INIS

Optional Information