Published 1989 | Version v1
Book

On the formation and characterization of microcrystalline Si:H prepared by RF magnetron sputtering

  • 1. Crete Univ. (Greece). Research Center of Crete and Physics Dept.
  • 2. Thessaloniki Univ. (Greece). First Physics Lab.

Description

Preparation of thin films of microcrystalline silicon (μc-Si) can be achieved by, amongst other techniques, reactive sputtering. The authors present a wide spectrum of characterization techniques (optical, electrical, structural) providing clear evidence towards distinguishing between crystalline, amorphous and microcrystalline structures of the developed films. In addition, for μc-Si films prepared by sputtering there is information of columnar structure development. 15 refs.; 5 figs

Additional details

Publishing Information

Publisher
Kluwer.
Imprint Place
Dordrecht (Netherlands)
ISBN
0-7923-0035-1
Imprint Title
Materials modification by high-fluence ion beams
Imprint Pagination
611 p.
Journal Volume
155
Series
NATO ASI Series.;Series E: Applied Sciences.
Journal Page Range
p. 93-100.

Conference

Title
NATO Advanced Study Institute on materials modification by high-fluence ion beams.
Dates
24 Aug - 4 Sep 1987.
Place
Viana do Castelo (Portugal).

Optional Information

Notes
Imprint:Includes author and subject indexes.