CdSe colloidal nanocrystals monolithically integrated in a pseudomorphic semiconductor epilayer
Creators
- 1. Department Physik, Center for Optoelectronics and Photonics Paderborn (CeOPP), Universität Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany)
- 2. Institut für Optik und Atomare Physik, Technische Universität Berlin, Strasse des 17. Juni 135, D-10623 Berlin (Germany)
- 3. Physics Faculty-ICTM, University of Havana, Colina Universitaria, C.P. 10400 Havana (Cuba)
- 4. Institute for Physico-Chemical Problems, Belarussian State University, Minsk 220080 (Belarus)
Description
As optically active emitters in a semiconductor matrix, core/shell and bare CdSe colloidal nanocrystals (CNCs) were monolithically incorporated in ZnSe pseudomorphic epilayers by molecular beam epitaxy (MBE). A suspension of wet chemically synthesized CNCs was sprayed ex-situ over a pseudomorphic ZnSe/GaAs(001) heterostructure using a nebulizer. Subsequently, the matrix material growth was resumed to form a capping layer by a slow MBE growth mode. Structural investigations show high crystalline quality and pseudomorphic epitaxial character of the whole hybrid CNC-matrix structure. The core/shell CNCs remain optically active following the embedding process. Their emission is blue shifted without a significant change on the spectral shape, and shows the same temperature dependence as that of the free exciton peak energy in zinc-blende CdSe at temperatures above 80 K. Our optical characterization of the samples showed that the embedded CNCs were stable and that the structure of the host was preserved. These results are encouraging for the fabrication of more complex optoelectronic devices based on CNCs.
Additional details
Identifiers
- DOI
- 10.1063/1.4773531;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 113
- Journal Issue
- 2
- Journal Page Range
- p. 023502-023502.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44059973
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM SELENIDES; CRYSTAL STRUCTURE; CRYSTALS; GALLIUM ARSENIDES; HETEROJUNCTIONS; LAYERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT; TEMPERATURE DEPENDENCE; ZINC SELENIDES; ZINC SULFIDES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INORGANIC PHOSPHORS; LUMINESCENCE; MATERIALS; PHOSPHORS; PHOTON EMISSION; PNICTIDES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2013 American Institute of Physics