Published 2003 | Version v1
Miscellaneous Metadata-only

Surprisingly low built-in electric fields in quaternary InAlGaN heterostructures

Creators

  • 1. Universitete Montpellier, Montpellier (France)
  • 2. High Pressure Research Center, Polish Academy of Sciences (UNIPRESS), Warsaw (Poland)
  • 3. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 4. Institute of Physical and Chemical Research (RIKEN), Saitama (Japan)

Description

no abstract available

Part of:
Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting

Additional details

Publishing Information

Imprint Title
Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting
Imprint Pagination
287 p.
Journal Page Range
p. 55-56

Conference

Title
European Materials Conference E-MRS 2003 Fall Meeting
Dates
15-19 Sep 2003
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
35101060
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ALUMINIUM COMPOUNDS; ELECTRIC FIELDS; EMISSION SPECTRA; GALLIUM COMPOUNDS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LIFETIME; NANOSTRUCTURES; NITRIDES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; PRESSURE DEPENDENCE; QUANTUM MECHANICS
Descriptors DEC
ELECTRICITY; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MECHANICS; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SPECTRA

Optional Information