Published December 1995
| Version v1
Journal article
Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation
Creators
- 1. Centre d'Electronique de Montpellier (France)
- 2. CERT-ONERA, Toulouse (France)
Description
Upsets caused by incident heavy ion on CMOS static RAM are studied here. Three dimensional device simulations, based on a description of a full epitaxial CMOS inverter, and experimental results are reported for evaluation of single and multiple bit error risk. The particular influences of hit location and incidence angle are examined
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 42
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 1789-1796.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- 32. annual IEEE international nuclear and space radiation effects conference.
- Dates
- 17-21 Jul 1995.
- Place
- Madison, WI (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27045568
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- COMPUTERIZED SIMULATION; ELECTRON PAIRS; ENERGY LOSSES; EXPERIMENTAL DATA; HEAVY IONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR STORAGE DEVICES; THEORETICAL DATA; THREE-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- CHARGED PARTICLES; DATA; INFORMATION; IONS; MEMORY DEVICES; NUMERICAL DATA; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SIMULATION
Optional Information
- Secondary number(s)
- CONF-950716--.