Published June 1994 | Version v1
Journal article

Polygonization of single crystals of the fluorite-type oxide UO2 due to high dose ion implantation

  • 1. Commission of the European Communities, Joint Research Centre, Institute for Transuranium Elements, Postfach 2340, ia, D-76125 Karlsruhe (Germany)
  • 2. Kernforschungszentrum Karlsruhe, Institut fuer Nukleare Festkoerperphysik, Postfach 3640, D-76021 Karlsruhe (Germany)

Description

A transition of the type single crystal-polycrystal has recently gained large interest for the fluorite-type oxide UO2. UO2 is todays fuel for electricity producing nuclear power stations. It is used as sintered product with a typical grain size of 10 to 15 μm. Above a certain level of damage and/or fission products, a grain subdivision process is seen causing each grain to subdivide into 104 to 105 subgrains (so-called RIM effect). A parametric study with UO2 single crystals and in situ ion implantation/channeling analysis was performed to investigate the basic mechanisms of this phenomenon. For most experiments, Xe ions of up to 300 keV energy and up to doses of 1x1017 ions/cm2 were used. At a given critical dose, dramatic changes of the damage peak in the channeling spectra were seen. Though these peaks eventually reached the random yield, analysis of the peak shapes in X-ray diffraction measurements (Omega scans) and channeling angular scan measurements proved that polygonization (rather than amorphization) had occurred causing a fine-grained polycrystalline structure with a misalignment between grains of a few degrees only. The mechanism of this process is discussed in terms of overpressurized gas bubbles causing cleavage and microfractures and the relevance to the technological application is treated. ((orig.))

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
91
Journal Issue
1-4
Journal Page Range
p. 294-300.
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
7. international conference on radiation effects in insulators (REI-7).
Dates
6-10 Sep 1993.
Place
Nagoya (Japan).