Published January 7, 2011 | Version v1
Journal article

Synthesis of Endohedral Fullerene Using ECR Ion Source

  • 1. Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama (Japan)
  • 2. Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama (Japan)
  • 3. Tateyama Machine Co., Ltd., 30 Shimonoban, Toyama, Toyama (Japan)
  • 4. National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage, Chiba (Japan)
  • 5. Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka (Japan)
  • 6. Institute of Nuclear Research (ATOMKI), H-4026 Debrecen (Hungary)

Description

We are developing an ECRIS apparatus which is designed for the production of endohedral fullerenes. Our promising approaches to produce the endohedral fullerenes using the ECRIS are the ion-ion collision reaction of fullerenes and the other atom in their mixture plasma and simple ion implantation of atom into fullerene layer. In this study, we tried to synthesize the endohedral nitrogen-fullerenes by ion implantation. N+ beam was irradiated to a fullerene target with a specific energy and dose. As a result, we could observe the peak of N+C60 from targets after N+ beam irradiation with TOF-SIMS and LDI-TOF-MS.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1321
Journal Issue
1
Journal Page Range
p. 480-483
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
18. international conference on ion implantation technology
Acronym
IIT 2010
Dates
6-11 Jun 2010
Place
Kyoto (Japan)

Optional Information

Notes
(c) 2010 American Institute of Physics