Published October 2017 | Version v1
Journal article

First-principles study of SO2 sensors based on phosphorene and its isoelectronic counterparts: GeS, GeSe, SnS, SnSe

  • 1. Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, Institute of Optoelectronics & Nanomaterials, Nanjing University of Science and Technology, Nanjing, 210094 (China)

Description

Highlights: • The structure and electronic properties of the SO2 adsorbed on phosphorene and its isoelectronic counterparts are studied. • The SO2 molecule serves as a strong electron acceptor to the five substrates. • The SO2 adsorption modified remarkably the electronic properties of the five substrates. Phosphorene and its isoelectronic counterparts, such as GeS, GeSe, SnS and SnSe monolayers, show great potential in electrical and sensing applications. Here, we study the SO2 sensing properties of phosphorene and its isoelectronic counterparts by first-principles calculations. Results predict that the SO2 molecule as electron acceptor holds high adsorption strength with the five monolayer substrates, especially for SnS and SnSe monolayers. Moreover, the electronic properties of the five substrates can be modified by the SO2 molecule, together with distinct charge transfer, rendering them promising for application as a high-performance gas sensor.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.cplett.2017.08.030

Additional details

Identifiers

DOI
10.1016/j.cplett.2017.08.030;
PII
S0009261417307911;

Publishing Information

Journal Title
Chemical Physics Letters
Journal Volume
686
Journal Page Range
p. 83-87
ISSN
0009-2614
CODEN
CHPLBC

INIS

Optional Information

Copyright
Copyright (c) 2017 Elsevier B.V. All rights reserved.