Published 2008 | Version v1
Miscellaneous

Electrical Characterization of P-Channel Organic Thin Film Transistor With Low Voltage Based on Fluorescein Sodium Salt

  • 1. Firat University, Department of Physics, Elazig (Turkey)

Description

Organic thin film transistor has been fabricated using fluorescein sodium salt as an activate layer and SiO2 as a gate dielectric. The drain-source current- drain-source voltage curves of the OTFT were obtained under negative and positive gate voltages. The curves indicate a linear region for negative voltage whereas indicates a saturation region at positive VG voltage. The operating voltage of the OTFT studied is about 1 V and this value is very low. The output characteristics of the transistor indicate that the transistor is a p-channel organic thin film transistor with low voltage based on fluorescein sodium salt

Part of:
Book of Abstracts

Additional details

Additional titles

Original title (Turkish)
Oezetler Kitabi

Publishing Information

Imprint Title
Book of Abstracts
Imprint Pagination
764 p.
Journal Page Range
p. 440
Report number
INIS-TR--131

Conference

Title
25. International Physics Congress of the Turkish Physical Society
Original Conference Title
Turk Fizik Dernegi 25. Uluslararasi Fizik Kongresi
Dates
25-29 Aug 2008
Place
Bodrum (Turkey)

INIS

Country of Publication
Turkey
Country of Input or Organization
Turkey
INIS RN
40109251
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; LAYERS; SILICON OXIDES; THIN FILMS; TRANSISTORS
Descriptors DEC
CHALCOGENIDES; ELECTRICAL PROPERTIES; FILMS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS

Optional Information

Notes
Imprint:Oezetler Kitabi