Published 2008
| Version v1
Miscellaneous
Electrical Characterization of P-Channel Organic Thin Film Transistor With Low Voltage Based on Fluorescein Sodium Salt
Description
Organic thin film transistor has been fabricated using fluorescein sodium salt as an activate layer and SiO2 as a gate dielectric. The drain-source current- drain-source voltage curves of the OTFT were obtained under negative and positive gate voltages. The curves indicate a linear region for negative voltage whereas indicates a saturation region at positive VG voltage. The operating voltage of the OTFT studied is about 1 V and this value is very low. The output characteristics of the transistor indicate that the transistor is a p-channel organic thin film transistor with low voltage based on fluorescein sodium salt
Additional details
Additional titles
- Original title (Turkish)
- Oezetler Kitabi
Publishing Information
- Imprint Title
- Book of Abstracts
- Imprint Pagination
- 764 p.
- Journal Page Range
- p. 440
- Report number
- INIS-TR--131
Conference
- Title
- 25. International Physics Congress of the Turkish Physical Society
- Original Conference Title
- Turk Fizik Dernegi 25. Uluslararasi Fizik Kongresi
- Dates
- 25-29 Aug 2008
- Place
- Bodrum (Turkey)
INIS
- Country of Publication
- Turkey
- Country of Input or Organization
- Turkey
- INIS RN
- 40109251
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; LAYERS; SILICON OXIDES; THIN FILMS; TRANSISTORS
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; FILMS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS
Optional Information
- Notes
- Imprint:Oezetler Kitabi