Published 2001
| Version v1
Miscellaneous
Development of high-resistivity Si as photoconductor
Creators
- 1. China Academy of Engineering Physics, Mianyang (China). Inst. of Electronic Engineering
Description
In this paper, high-resistivity Si photoconductor has been developed by vacuum evaporation. For high-sensitivity with low reverse voltage, it can be used to switch γ-ray trigger of extraordinarily low flux. Mechanism and structure are designed, and manufacture is described in this paper
Additional details
Publishing Information
- Imprint Title
- Proceedings of the 3th national conference on nuclear instrument
- Imprint Pagination
- 282 p.
- Journal Page Range
- p. 184-185
Conference
- Title
- 3. national conference on nuclear instrument
- Dates
- 20-24 Sep 2001
- Place
- Guilin (China)
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 36021508
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- DESIGN; PHOTOCONDUCTORS; PHOTODETECTORS; SENSITIVITY; SILICON; USES; VACUUM EVAPORATION
- Descriptors DEC
- ELEMENTS; EVAPORATION; PHASE TRANSFORMATIONS; SEMIMETALS