Shubnikov de Haas Effect and Electron Mobilities in the Isomorphic InGaAs Quantum Well With the InAs Insert on the InP Substrate

The Shubnikov - de Haas (SdH) effect at T=4.2 and 8.4 K and the Hall effect have been investigated in isomorphic In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As/InP quantum well with InAs inserts to the center of the quantum well. The structures were both- sides delta-doped by silicon. The effective mass m* was measured by SdH effect by a new method which allowed experimentally to determine m* in the every dimensionally quantized subband using the temperature dependence of the SdH effect amplitude. Central InAs inserts in a quantum well lead to a decreasing of m* by about 20% as compared with the uniform In_0.53Ga_0.47As lattice-matched quantum well. We also calculated the transport and quantum mobility of electrons in dimensionally quantized subbands using the SdH effect. The calculated and experimentally determined values are in a good agreement