Published February 2010
| Version v1
Journal article
The mechanism of metal conductivity over the interface between organic insulators
- 1. Moscow Engineering Physics Institute (Russian Federation)
- 2. Russian Academy of Sciences, Frumkin Institute of Physical Chemistry and Electrochemistry (Russian Federation)
Description
The hopping mobility of charge carriers (both at the surface and in the bulk) is analyzed theoretically in the presence of electron-hole pairs. A physical model is suggested for the metal conductivity over the interface between organic materials, each being an insulator by itself. The conductivity is due to the rather high surface density of geminate pairs formed at the interface. Conditions are established wherein the transitions of a significant portion of charge carriers between molecules do not require thermal activation or tunneling. The surface conductivity and mobility of charge carriers are estimated by numerical simulation.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 44
- Journal Issue
- 2
- Journal Page Range
- p. 211-217
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43040165
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE CARRIERS; COMPUTERIZED SIMULATION; DENSITY; HOLES; INTERFACES; METALS; MOBILITY; MOLECULES; ORGANIC INSULATORS; ORGANIC MATTER; SURFACES; TUNNEL EFFECT
- Descriptors DEC
- ELEMENTS; MATTER; PHYSICAL PROPERTIES; SIMULATION
Optional Information
- Copyright
- Copyright (c) 2010 Pleiades Publishing, Ltd.