Published February 2010 | Version v1
Journal article

The mechanism of metal conductivity over the interface between organic insulators

  • 1. Moscow Engineering Physics Institute (Russian Federation)
  • 2. Russian Academy of Sciences, Frumkin Institute of Physical Chemistry and Electrochemistry (Russian Federation)

Description

The hopping mobility of charge carriers (both at the surface and in the bulk) is analyzed theoretically in the presence of electron-hole pairs. A physical model is suggested for the metal conductivity over the interface between organic materials, each being an insulator by itself. The conductivity is due to the rather high surface density of geminate pairs formed at the interface. Conditions are established wherein the transitions of a significant portion of charge carriers between molecules do not require thermal activation or tunneling. The surface conductivity and mobility of charge carriers are estimated by numerical simulation.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
44
Journal Issue
2
Journal Page Range
p. 211-217
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43040165
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHARGE CARRIERS; COMPUTERIZED SIMULATION; DENSITY; HOLES; INTERFACES; METALS; MOBILITY; MOLECULES; ORGANIC INSULATORS; ORGANIC MATTER; SURFACES; TUNNEL EFFECT
Descriptors DEC
ELEMENTS; MATTER; PHYSICAL PROPERTIES; SIMULATION

Optional Information

Copyright
Copyright (c) 2010 Pleiades Publishing, Ltd.