Published September 2016 | Version v1
Journal article

Crystallization behavior during transparent In2O3-ZnO film growth

  • 1. Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan)

Description

Structural evolution of transparent conductive In2O3-ZnO (IZO) films with increasing substrate temperature during sputtering was studied using transmission electron microscopy (TEM) and spectroscopic ellipsometry. Increasing the substrate temperature can induce film crystallization in the initial growth stage, and enhance the crystallization of IZO films. Extensive simulations using ellipsometry data demonstrated a decrease in the crystallization rate for IZO films deposited between 200 and 300 C, which is attributed to the influence of the interference between nearby growing grains. TEM observations also reveal that the growth competition between different crystallites leads to an increase in the lateral grain size with increasing substrate temperature. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.201532887

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. A, Applications and Materials Science
Journal Volume
213
Journal Issue
9
Journal Page Range
p. 2291-2295
ISSN
1862-6300
CODEN
PSSABA

Optional Information

Notes
With 4 figs., 1 tab.