Published October 27, 2015 | Version v1
Journal article Metadata-only

Strain localization parameters of AlCu4MgSi processed by high-energy electron beams

Creators

  • 1. National Research Tomsk Polytechnic University, Tomsk, 634050 (Russian Federation)
  • 2. Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation)
  • 3. Siberian State Industrial University, Novokuznetsk, 654007 (Russian Federation)
  • 4. Institute of High Current Electronics SB RAS, Tomsk, 634055 (Russian Federation)

Description

The influence of the electron beam surface treatment of AlCu4MgSi on the strain localization parameters and on the critical strain value of the Portevin–Le Chatelier effect has been considered. The strain localization parameters were measured using speckle imaging of the specimens subjected to the constant strain rate uniaxial tension at a room temperature. Impact of the surface treatment on the Portevin–Le Chatelier effect has been investigated

Additional details

Identifiers

DOI
10.1063/1.4932819;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1683
Journal Issue
1
Journal Page Range
p. 020129-020129.4
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
International conference on advanced materials with hierarchical structure for new technologies and reliable structures 2015
Dates
21-25 Sep 2015
Place
Tomsk (Russian Federation)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47062695
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM COMPOUNDS; BIOMEDICAL RADIOGRAPHY; COPPER COMPOUNDS; DEFORMATION; ELECTRON BEAMS; MAGNESIUM SILICIDES; STRAIN RATE; STRAINS; SURFACE TREATMENTS; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; BEAMS; DIAGNOSTIC TECHNIQUES; LEPTON BEAMS; MAGNESIUM COMPOUNDS; MEDICINE; NUCLEAR MEDICINE; PARTICLE BEAMS; RADIOLOGY; SILICIDES; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
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